Sputtering is a technique used to deposit thin films of a material onto a surface (a.k.a. "substrate"). A gaseous plasma is created and the ions from this plasma are accelerated into a source material (a.k.a. "target") which is eroded by the ions and ejected in the form of neutral particles - either individual atoms, clusters of atoms or molecules. As these particles are ejected they travel in a straight line unless they come into contact with something - other particles or a nearby surface.
The ATC ORION Series Sputtering Systems feature a con-focal sputter source flange oriented at specific angles. The specially designed chimney/ground shield/shutter system allows a high degree of deposition uniformity over substrates over twice the target diameter. Typical deposition profile uniformity with SiO2 on a 3" diameter Si wafer is better than +/- 2% excluding 5 mm edge for 2" sputter source in RF mode. The con-focal geometry results in better uniformity, the ability to co-deposit alloy films and the ability to grow better ultra-thin film multilayers since the substrate is always "in the plasma."
ORION-5-UHV Custom Sputtering System is equipped with two 2" and one 1" sputter sources. There are two Thermal Evaporation Sources mounted in the chamber. To control and calibrate sputter deposition rate a Quartz Crystal Thickness Monitor is installed. Substrate RF Bias can be applied for the pre-cleaning of substrate. Load-Lock chamber is used for substrate loading to prevent the main-chamber contamination and to reduce substrate load time. Substrate can be heated up to 850 C by the radiant heater.
- Nombre: Juan J. Núñez C.
- Asignatura: CRF.
- Fuente: http://www.inspirenano.ie/Equipment/Equipment-Items/MSSI/AJA-ORION-5-UHV-Custom-Sputtering-System.aspx
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